Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Semiconductors Année : 2016

Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation

Résumé

The numerical simulation, and theoretical and experimental optimization of field-effect microwave high-electron-mobility transistors (HEMTs) based on GaN/AlN/AlGaN heterostructures are performed. The results of the study showed that the optimal thicknesses and compositions of the heterostructure layers, allowing high microwave power implementation, are in relatively narrow ranges. It is shown that numerical simulation can be efficiently applied to the development of microwave HEMTs, taking into account basic physical phenomena and features of actual device structures.
Fichier non déposé

Dates et versions

hal-01721147 , version 1 (01-03-2018)

Identifiants

Citer

V.G. Tikhomirov, V.E. Zemlyakov, V.V. Volkov, Y.M. Parnes, V.N. Vyuginov, et al.. Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation. Semiconductors, 2016, 50 (2), pp.244-248. ⟨10.1134/S1063782616020263⟩. ⟨hal-01721147⟩
198 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More