Critical failure mechanism of 0.25 µm AlGaN/GaN HEMT under severe stress test conditions

Dominique Thales R&t Carisetti , Nicolas Sarazin (1) , Laurent Brunel (2) , J.C. Clement , Nathalie Malbert (3) , Arnaud Curutchet (3) , Nathalie Labat (4)

1 III-V Lab - Alcatel-Thales III-V Lab
2 UMS
3 NANOELECTRONIQUE/III-V
4 IMS - Laboratoire de l'intégration, du matériau au système

Domaines: Electronique

Dominique Thales R&t Carisetti, Nicolas Sarazin, Laurent Brunel, J.C. Clement, Nathalie Malbert, et al.. Critical failure mechanism of 0.25 µm AlGaN/GaN HEMT under severe stress test conditions. 7th Wide band gap semiconductor and components workshop, pp. 309-315, septembre 2014, Frascati, Italy, 2014, Frascati, Italy. ⟨hal-01718823⟩