Data retention extraction methodology for perpendicular STT-MRAM

Abstract : While perpendicular STT-MRAM are seen as a promising next-generation memory, retention becomes critical and must be characterized precisely. Four extraction methods are explained taking special emphasize on accuracy and precision. They are then applied from single cell to kb-array, from 50 to 250 nm diameter cells and up to 235°C in order to show the limitations and advantages of each method.
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Conference papers
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https://hal.archives-ouvertes.fr/hal-01718116
Contributor : Antoine Chavent <>
Submitted on : Tuesday, February 27, 2018 - 10:35:31 AM
Last modification on : Thursday, April 4, 2019 - 9:44:02 AM

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L. Tillie, E. Nowak, R. Sousa, M.-C. Cyrille, B. Delaet, et al.. Data retention extraction methodology for perpendicular STT-MRAM. Electron Devices Meeting (IEDM), 2016 IEEE International, Dec 2016, San Francisco, United States. ⟨10.1109/IEDM.2016.7838492⟩. ⟨hal-01718116⟩

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