A Distributed Extended Ebers–Moll Model Topology for SiGe Heterojunction Bipolar Phototransistors Based on Drift–Diffusion Hydrodynamic Behavior

Abstract : This paper proposes a novel type of compact circuit model for silicon germanium (SiGe) heterojunction phototransistor (HPT) that is justified from the distributed nature of both its electrical and optical behaviors. The proposed model is based on a modified Ebers-Model structure and contains 28 different parameters. It is independent of the nature of the base bias (current or voltage), as opposed to existing models. The method to identify that the architecture of the model is original as it makes use of a drift-diffusion numerical simulation of a SiGe HPT adjusted to experimental data. A good fit of the model both in amplitude and phase is obtained through the nine optomicrowave S-parameters.
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Article dans une revue
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2017, 64 (5), pp.2267 - 2274. 〈10.1109/TED.2017.2675912〉
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https://hal.archives-ouvertes.fr/hal-01708912
Contributeur : Catherine Algani <>
Soumis le : mercredi 14 février 2018 - 11:45:39
Dernière modification le : jeudi 24 mai 2018 - 15:58:11

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Alae Bennour, Frédéric Moutier, Jean-Luc Polleux, Catherine Algani, Said Mazer. A Distributed Extended Ebers–Moll Model Topology for SiGe Heterojunction Bipolar Phototransistors Based on Drift–Diffusion Hydrodynamic Behavior. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2017, 64 (5), pp.2267 - 2274. 〈10.1109/TED.2017.2675912〉. 〈hal-01708912〉

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