Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces

Abstract : A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe2O4 films can be grown epitaxially on Si(111) using a Y2O3 buffer layer, and remarkably the Y2O3/Si(111) interface is stable and remains atomically sharp. CoFe2O4 films present high crystal quality and high saturation magnetization.
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Patricia de Coux, R. Bachelet, Bénédicte Warot-Fonrose, V. Skumryev, L. Lupina, et al.. Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces. Applied Physics Letters, American Institute of Physics, 2014, 105 (1), pp.012401. ⟨10.1063/1.4887349⟩. ⟨hal-01707028⟩

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