Direct Copper Bonding for Power Interconnects: Design, Manufacturing, and Test

Bassem Mouawad (1) , Benoit Thollin (2) , Cyril Buttay (1) , Laurent Dupont (2) , Vincent Bley (3) , D. Fabregue (4) , Maher Soueidan (1) , Benoît Schlegel (5) , Julien Pezard (1) , Jean Christophe Crebier (6)

1 EE - Ampère, Département Energie Electrique
2 IFSTTAR/COSYS/LTN - Laboratoire des Technologies Nouvelles
3 LAPLACE-MDCE - Matériaux Diélectriques dans la Conversion d’Energie
4 MATEIS - Matériaux, ingénierie et science [Villeurbanne]
5 LAPLACE - LAboratoire PLasma et Conversion d'Energie
6 G2ELab - Laboratoire de Génie Electrique de Grenoble

3-D power module structures allow for better cooling and lower parasitic inductances compared with the classical planar technology. In this paper, we present a 3-D technology that uses an innovative assembly method (direct copper-to-copper bonding). The concept and manufacturing process of this technology is described in detail. An accurate electrical characterization is then performed to compare its performance with that of the classical planar structures.

Mots clés: bonding processes; interconnections; power semiconductor devices; semiconductor device manufacture; semiconductor device metallisation; semiconductor device packaging; semiconductor device testing; thermal management (packaging); 3D power module structures; 3D technology; Cu-Cu; assembly method; direct copper-to-copper bonding; manufacturing process; parasitic inductances; planar technology; power interconnects; Assembly; Bonding; Copper; Heating; Packaging; Substrates; 3-D packaging; power electronics; spark plasma sintering (SPS)

Domaines: Sciences de l'ingénieur [physics]

Bassem Mouawad, Benoit Thollin, Cyril Buttay, Laurent Dupont, Vincent Bley, et al.. Direct Copper Bonding for Power Interconnects: Design, Manufacturing, and Test. IEEE Transactions on Components, Packaging and Manufacturing Technology. Part A, Manufacturing Technology, 2015, 5 (1), pp.143-150. ⟨10.1109/TCPMT.2014.2376882⟩. ⟨hal-01207014⟩