Limits in point to point resolution of MOS based pixels detector arrays

Nicolas Fourches 1 Daniel Desforge 1 Mariam Kebbiri 1 Vishant Kumar 2 Yves Serruys 3 Gaêlle Gutierrez 3 Frederic Leprêtre 3 François Jomard 4
1 IRFU - Institut de Recherches sur les lois Fondamentales de l'Univers
2 CIMAP - UMR 6252 - Centre de recherche sur les Ions, les MAtériaux et la Photonique
3 CEA-DEN - CEA-Direction de l'Energie Nucléaire
4 UVSQ - Université de Versailles Saint-Quentin-en-Yvelines
Abstract : In high energy physics point-to-point resolution is a key prerequisite for particle detector pixel arrays. Current and future experiments require the development of inner-detectors able to resolve the tracks of particles down to the micron range. Present-day technologies, although not fully implemented in actual detectors, can reach a 5-μm limit, this limit being based on statistical measurements, with a pixel-pitch in the 10 μm range. This paper is devoted to the evaluation of the building blocks for use in pixel arrays enabling accurate tracking of charged particles. Basing us on simulations we will make here a quantitative evaluation of the physical and technological limits in pixel size. Attempts to design small pixels based on SOI technology will be briefly recalled here. A design based on CMOS compatible technologies that allow a reduction of the pixel size below the micrometer is introduced here. Its physical principle relies on a buried carrier-localizing collecting gate. The fabrication process needed by this pixel design can be based on existing process steps used in silicon microelectronics. The pixel characteristics will be discussed as well as the design of pixel arrays. The existing bottlenecks and how to overcome them will be discussed in the light of recent ion implantation and material characterization experiments.
Keywords : Particle tracking detectors Electronic detector readout concepts (solid-state) electron emission pulse formation multiplication and induction charge transport Detector modelling and simulations II (electric fields Detector modelling and simulations I (interaction of radiation with matter interaction of photons with matter interaction of hadrons with matter etc)
Type de document :
Communication dans un congrès
11th International Conference on Position Sensitive Detectors, Sep 2017, Milton Keynes, United Kingdom. JINST, 13 (01), pp.C01011, 2018, 〈10.1088/1748-0221/13/01/C01011〉
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Contributeur : Inspire Hep <>
Soumis le : jeudi 8 février 2018 - 08:59:27
Dernière modification le : lundi 13 août 2018 - 19:10:08

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DSM-IRAMIS | UVSQ | CEA | IRAMIS-CIMAP | DEN | DSM-IRFU | COMUE-NORMANDIE | CEA-DRF | UNIV-PARIS-SACLAY | CEA-UPSAY | ENSICAEN

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Nicolas Fourches, Daniel Desforge, Mariam Kebbiri, Vishant Kumar, Yves Serruys, et al.. Limits in point to point resolution of MOS based pixels detector arrays. 11th International Conference on Position Sensitive Detectors, Sep 2017, Milton Keynes, United Kingdom. JINST, 13 (01), pp.C01011, 2018, 〈10.1088/1748-0221/13/01/C01011〉. 〈hal-01703846〉

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