Degradation behavior of 600V-200A IGBT modules under Power cycling and high temperature environment conditions

Mounira Bouarroudj (1) , Zoubir Khatir (1) , Jean Pierre Ousten (1) , Frédéric Badel (1) , Laurent Dupont (2) , Stéphane Lefebvre (2)

1 INRETS/LTN - Laboratoire des Technologies Nouvelles
2 SATIE - Systèmes et Applications des Technologies de l'Information et de l'Energie

One challenge for automotive hybrid traction application is the use of high power IGBT modules that can whistand high ambient temperatures, from 90°C to 120°C, for reliability purpose. The paper presents ageing tests of 600V-200A IGBT modules subjected to power cycling with 60°C junction temperature swings at 90°C ambient temperature. Failure modes are described and obtained results on the module characteristics are detailed. Especially, physical degradations are described not only at the package level, like solder attach delaminations, but also at the chip level, with a shift on electrical characteristics such as threshold voltage. Finally, numerical investigations are performed in order to assess the thermal and thermo-mechanical constraints on silicon dies during power cycling and also to estimate the effect of ambiant temperature on the mechanical stresses.

Mots clés: ELECTRONIQUE; TEMPERATURE; HAUTE TEMPERATURE; VEHICULE HYBRIDE

Domaines: Electronique

Mounira Bouarroudj, Zoubir Khatir, Jean Pierre Ousten, Frédéric Badel, Laurent Dupont, et al.. Degradation behavior of 600V-200A IGBT modules under Power cycling and high temperature environment conditions. 18th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 2007, BORDEAUX, France. pp. 1719-1724, ⟨10.1016/j.microrel.2007.07.027⟩. ⟨hal-01702036⟩