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200V, 4MV/cm lateral diamond MOSFET

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https://hal.archives-ouvertes.fr/hal-01701734
Contributor : Thanh Toan Pham <>
Submitted on : Tuesday, February 6, 2018 - 9:53:11 AM
Last modification on : Thursday, September 16, 2021 - 2:03:50 PM

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Thanh-Toan Pham, Julien Pernot, C. Masante, D. Eon, E. Gheeraert, et al.. 200V, 4MV/cm lateral diamond MOSFET. 2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, United States. ⟨10.1109/IEDM.2017.8268458⟩. ⟨hal-01701734⟩

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