Fabrication of Planar Back End of Line Compatible HfOx Complementary Resistive Switches

Marina Labalette (1, 2, 3) , S. Jeannot (4) , S. Blonkowski (5) , Y. Beilliard (2, 3) , S. Ecoffey (6, 2, 3) , Abdelkader Souifi (1) , D. Drouin (7, 2, 3)

1 INL - DE - INL - Dispositifs Electroniques
2 LN2 - Laboratoire Nanotechnologies Nanosystèmes
3 3IT - Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke]
4 ST Microélectronics
5 ST-CROLLES - STMicroelectronics [Crolles]
6 STI-IMM-LEG
7 UdeS - Université de Sherbrooke

This paper presents the fabrication, together with morphological and electrical characterizations of complementary resistive switches using the nanodamascene process. The as-fabricated devices are fully embedded in an insulating oxide, opening the way for further process steps such as three-dimensional monolithic integration. Complementary resistive switches electrical performance is consistent with resistive random access memories fabricated and characterized with the same procedure that showed ROFF/RON ratios of 100. Complementary operating voltages of Vth1,3 = |0.8| V and Vth2.4 = |1.1| V are obtained for 88 × 22 nm2 junction with a 6 nm thick HfOx junction.

Domaines: Physique [physics]; Micro et nanotechnologies/Microélectronique; Optique [physics.optics]; Optique / photonique; Matériaux

Marina Labalette, S. Jeannot, S. Blonkowski, Y. Beilliard, S. Ecoffey, et al.. Fabrication of Planar Back End of Line Compatible HfOx Complementary Resistive Switches. IEEE Transactions on Nanotechnology, 2017, 16 (5), pp.745-751. ⟨10.1109/TNANO.2017.2698205⟩. ⟨hal-01701505⟩