HfOx complementary resistive switches

Marina Labalette (1, 2, 3) , S. Ecoffey (2, 3) , S. Jeannot (4) , Abdelkader Souifi (1) , D. Drouin (5, 2, 3)

1 INL - DE - INL - Dispositifs Electroniques
2 LN2 - Laboratoire Nanotechnologies Nanosystèmes
3 3IT - Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke]
4 ST-CROLLES - STMicroelectronics [Crolles]
5 UdeS - Université de Sherbrooke

This paper proposes the fabrication, together with morphological and electrical characterizations of complementary resistive switches using a nanodamascene process. Complementary switches electrical performance are coherent with ReRAM fabricated and characterized with the same procedure that showed Ron/Roff ratios of 100. Complementary operating voltages of Vth1,3 = |0.8| V and Vth2.4 = |1.1| V are obtained for 88×22 nm2 junction with 6 nm thick HfOx.

Domaines: Physique [physics]; Micro et nanotechnologies/Microélectronique; Optique / photonique; Optique [physics.optics]; Matériaux

Marina Labalette, S. Ecoffey, S. Jeannot, Abdelkader Souifi, D. Drouin. HfOx complementary resistive switches. IEEE Nanotechnology Materials and Devices Conference (NMDC), 2016, Jan 2016, Toulouse, France. ⟨hal-01701384⟩