The Physics of Macropore Formation in Low Doped n-Type Silicon, Journal of The Electrochemical Society, vol.140, issue.10, p.2836, 1993. ,
DOI : 10.1149/1.2220919
Pores in III???V Semiconductors, Advanced Materials, vol.15, issue.3, p.183, 2003. ,
DOI : 10.1002/adma.200390043
Jet Polishing of Semiconductors, Journal of The Electrochemical Society, vol.119, issue.3, p.314, 1972. ,
DOI : 10.1149/1.2404193
Crystallographic aspects of pore formation in gallium arsenide and silicon, Philosophical Magazine A, vol.239, issue.2, p.525, 1997. ,
DOI : 10.1149/1.2068987
Morphology and Strongly Enhanced Photoresponse of GaP Electrodes Made Porous by Anodic Etching, Journal of The Electrochemical Society, vol.143, issue.1, p.305, 1996. ,
DOI : 10.1149/1.1836428
Pore Formation on n-InP, physica status solidi (a), vol.473, issue.1, p.51, 2000. ,
DOI : 10.1016/S0022-0728(99)00107-2
Formation of porous layers on InSb(100) by anodization, physica status solidi (a), vol.197, issue.1, p.71, 2003. ,
DOI : 10.1002/pssa.200306470
Pore Formation on n-InP(100) in Acidic Liquid Ammonia at 223???K, Electrochemical and Solid-State Letters, vol.93, issue.70, p.35, 2007. ,
DOI : 10.1103/PhysRevB.27.985
Electrochemical Formation of Uniform and Straight Nano-Pore Arrays on (001) InP Surfaces and Their Photoluminescence Characterizations, Japanese Journal of Applied Physics, vol.39, issue.Part 1, No. 7B, p.4616, 2000. ,
DOI : 10.1143/JJAP.39.4616
Composition and growth of thin anodic oxides formed on InP (100), Electrochimica Acta, vol.47, issue.17, p.2733, 2002. ,
DOI : 10.1016/S0013-4686(02)00138-X
Growth and characterization of thin anodic oxide films on n-InSb(100) formed in aqueous solutions, Corrosion Science, vol.46, issue.8, p.2067, 2004. ,
DOI : 10.1016/j.corsci.2003.11.003
Anodic etching of InP using neutral NaCl electrolyte, Journal of Porous Materials, vol.46, issue.22, p.707, 2009. ,
DOI : 10.1063/1.2076445
Electrochemical Formation of Ordered Pore Arrays in InP in KCl, ECS Transactions, vol.50, issue.6, p.377, 2012. ,
DOI : 10.1149/05006.0377ecst
The Photoelectrochemical Oxidation of (100), (111), and (1??1??1??) n-InP and n-GaAs, Journal of The Electrochemical Society, vol.130, issue.11, p.2288, 1983. ,
DOI : 10.1149/1.2119571
Electrochemical pore formation mechanism in III???V crystals (Part I), Semiconductors, vol.37, issue.70, p.832, 2007. ,
DOI : 10.1002/j.1538-7305.1956.tb02385.x
Electrochemical pore formation mechanism in III???V crystals (Part II), Semiconductors, vol.38, issue.7, p.845, 2007. ,
DOI : 10.1134/S1063782607070123
Characterization of n-Type Semiconducting Indium Phosphide Photoelectrodes, Journal of The Electrochemical Society, vol.124, issue.10, p.1603, 1977. ,
DOI : 10.1149/1.2133118
The Etching of InP in HCl Solutions: A Chemical Mechanism, Journal of The Electrochemical Society, vol.131, issue.11, p.2641, 1984. ,
DOI : 10.1149/1.2115375
The photodissolution of InP, Electrochimica Acta, vol.37, issue.2, p.289, 1992. ,
DOI : 10.1016/0013-4686(92)85015-D
Propagation of nanopores during anodic etching of n-InP in KOH, Physical Chemistry Chemical Physics, vol.16, issue.6, p.15135, 2013. ,
DOI : 10.1007/s10934-008-9252-5
New modes of FFT impedance spectroscopy applied to semiconductor pore etching and materials characterization, physica status solidi (a), vol.615, issue.70, p.2485, 2008. ,
DOI : 10.1016/j.jelechem.2007.12.011
Electrochemical and optical characterizations of anodic porous n-InP(100) layers, Electrochimica Acta, vol.56, issue.2, p.878, 2010. ,
DOI : 10.1016/j.electacta.2010.09.031
Preview this Book Handbook of Inorganic Compounds, 2011. ,
Handbook of X-Ray Photoelectron Spectroscopy: A Reference Book of Standard Spectra for Identification and Interpretation of XPS Data, 1995. ,
Combined photoelectrochemical conditioning and surface analysis of InP photocathodes, Electrochimica Acta, vol.47, issue.16, p.2639, 2002. ,
DOI : 10.1016/S0013-4686(02)00125-1