Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current technique

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https://hal.archives-ouvertes.fr/hal-01696146
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Submitted on : Tuesday, January 30, 2018 - 10:43:17 AM
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T.A. Nguyen, P.-Y. Joubert, S. Lefebvre, G. Chaplier, L. Rousseau. Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current technique. Microelectronics Reliability, Elsevier, 2011, 51 (6), pp.1127 - 1135. ⟨10.1016/j.microrel.2011.02.002⟩. ⟨hal-01696146⟩

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