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Article Dans Une Revue Microelectronics Reliability Année : 2017

Single-event-transient effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate investigated by 3D simulation

Résumé

The Junctionless Double-Gate MOSFET combined with a Dual-Material Gate (JL-DMDG) is interesting for future ultra-scaled devices thanks to a simplified technological process (no junctions), reduced leakage currents and capability to reduce short-channel effects and hot-carrier effects (due to the step in the potential profile induced by the dual-material gate). In this work, we investigate the bipolar amplification and charge collection in JL-DMDG submitted to heavy-ion irradiation. The impact on single-event transients of several parameters such as the length of the high-workfunction gate-material region and of the workfunction of the low-workfunction gate-material region is also particularly addressed. We show that JL-DMDG is more sensitive to radiation than more conventional devices with single-material-gate or operating in inversion-mode. (C) 2017 Elsevier Ltd. All rights reserved.
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Dates et versions

hal-01693979 , version 1 (07-05-2018)

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Citer

Daniela Munteanu, Jean-Luc Autran, S. Moindjie. Single-event-transient effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate investigated by 3D simulation. Microelectronics Reliability, 2017, 76 (SI), pp.719-724. ⟨10.1016/j.microrel.2017.07.040⟩. ⟨hal-01693979⟩
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