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TCAD Simulation of the Single Event Effects in Normally-off GaN Transistors after Heavy Ion Radiation

Abstract : Electrical behavior of normally-off GaN power transistors under heavy ion stress radiation is presented based on 2D-TCAD numerical simulation in order to better understand the mechanism of Single Event Effects (SEE) in these devices.
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https://hal.archives-ouvertes.fr/hal-01692046
Contributor : Frédéric Morancho <>
Submitted on : Tuesday, July 4, 2017 - 7:56:21 PM
Last modification on : Thursday, June 10, 2021 - 3:05:59 AM
Long-term archiving on: : Sunday, December 17, 2017 - 3:29:30 PM

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Moustafa Zerarka, Patrick Austin, Alain Bensoussan, Frédéric Morancho, André Durier. TCAD Simulation of the Single Event Effects in Normally-off GaN Transistors after Heavy Ion Radiation. RADECS 2016 (RADiation Effects on Components and Systems), Sep 2016, Brême, Germany. 4p., ⟨10.1109/TNS.2017.2710629⟩. ⟨hal-01692046v2⟩

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