Electrical spin injection and detection at Al$-2$O$_3$/$n$-type germanium interface using three terminal geometry

A. Jain; L. Louahadj; J. Peiro; J. C. Le Breton; C. Vergnaud; A. Barski; C. Beigne; L. Notin; A. Marty; Vincent Baltz; S. Auffret; E. Augendre; H. Jaffres; J. M. George; M. Jamet

doi:10.1063/1.3652757

Journal articles

Electrical spin injection and detection at Al$-2$O$_3$/$n$-type germanium interface using three terminal geometry

A. Jain ¹ L. Louahadj ¹ J. Peiro ² J. C. Le Breton ² C. Vergnaud ¹ A. Barski ¹ C. Beigne ¹ L. Notin ¹ A. Marty ¹ Vincent Baltz ³ S. Auffret ³ E. Augendre ⁴ H. Jaffres ² J. M. George ² M. Jamet ^{1, *}

* Corresponding author

1 NM - Nanostructures et Magnétisme

SP2M - UMR 9002 - Service de Physique des Matériaux et Microstructures : DSM/INAC/SP2M

2 UMPhy CNRS/THALES - Unité mixte de physique CNRS/Thales

3 SPINTEC - SPINtronique et TEchnologie des Composants

4 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

Abstract : In this letter, we report on electrical spin injection and detection in n-type germanium-on-insulator using a Co/Py/Al$-2$O$_3$ spin injector and 3-terminal non-local measurements. We observe an enhanced spin accumulation signal of the order of 1 meV consistent with the sequential tunneling process via interface states in the vicinity of the Al$-2$O$_3$/Ge interface. This spin signal is further observable up to 220 K. Moreover, the presence of a strong $inverted$ Hanle effect points out the influence of random fields arising from interface roughness on the injected spins.

Keywords : Germanium Elemental semiconductors Ozone Doping Schotty barriers

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Journal articles

Domain :

Physics [physics] / Condensed Matter [cond-mat]

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Submitted on : Thursday, May 23, 2019 - 9:28:53 PM
Last modification on : Saturday, January 23, 2021 - 4:58:02 PM

APL_99_162102_(2011).pdf

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