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Electrical spin injection and detection at Al$-2$O$_3$/$n$-type germanium interface using three terminal geometry

Abstract : In this letter, we report on electrical spin injection and detection in n-type germanium-on-insulator using a Co/Py/Al$-2$O$_3$ spin injector and 3-terminal non-local measurements. We observe an enhanced spin accumulation signal of the order of 1 meV consistent with the sequential tunneling process via interface states in the vicinity of the Al$-2$O$_3$/Ge interface. This spin signal is further observable up to 220 K. Moreover, the presence of a strong $inverted$ Hanle effect points out the influence of random fields arising from interface roughness on the injected spins.
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A. Jain, L. Louahadj, J. Peiro, J. C. Le Breton, C. Vergnaud, et al.. Electrical spin injection and detection at Al$-2$O$_3$/$n$-type germanium interface using three terminal geometry. Applied Physics Letters, American Institute of Physics, 2011, 99, pp.162102. ⟨10.1063/1.3652757⟩. ⟨hal-01683844⟩

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