Penetration depth and absorption mechanisms of spin currents in Ir 20 Mn 80 and Fe 50 Mn 50 polycrystalline films by ferromagnetic resonance and spin pumping

P. Merodio (1) , A. Ghosh (1) , C. Lemonias (1) , E. Gautier (1) , U. Ebels (1) , M. Chshiev (1) , H. Béa (1) , Vincent Baltz (1) , W. E. Bailey (2)

1 SPINTEC - SPINtronique et TEchnologie des Composants
2 Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, United States

Spintronics relies on the spin dependent transport properties of ferromagnets (Fs). Although antiferromagnets (AFs) are used for their magnetic properties only, some fundamental F-spintronics phenomena like spin transfer torque, domain wall motion, and tunnel anisotropic magnetoresistance also occur with AFs, thus making AF-spintronics attractive. Here, room temperature critical depths and absorption mechanisms of spin currents in Ir 20 Mn 80 and Fe 50 Mn 50 are determined by F-resonance and spin pumping. In particular, we find room temperature critical depths originating from different absorption mechanisms: dephasing for Ir 20 Mn 80 and spin flipping for Fe 50 Mn 50.

Domaines: Matière Condensée [cond-mat]

P. Merodio, A. Ghosh, C. Lemonias, E. Gautier, U. Ebels, et al.. Penetration depth and absorption mechanisms of spin currents in Ir 20 Mn 80 and Fe 50 Mn 50 polycrystalline films by ferromagnetic resonance and spin pumping. Applied Physics Letters, 2014, 104, pp.032406. ⟨10.1063/1.4862971⟩. ⟨hal-01683650⟩