Surface analysis of smart power top metal: IR thermal measurement and source potential mapping

Abstract : Reliability of modern power MOSFETs is assessed through accelerated electro-thermal aging tests. Top metallization layer reconstruction is one of the most observed degradation mechanisms in power devices operating under short circuit conditions. Experimental analysis results focused on temperature measurement and source potential mapping during ageing will be presented to corroborate previous results on electrical parameters evolution and to give new tools for health monitoring.
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https://hal.archives-ouvertes.fr/hal-01681518
Contributor : Mounira Berkani <>
Submitted on : Thursday, January 11, 2018 - 4:57:09 PM
Last modification on : Friday, October 11, 2019 - 8:22:08 PM

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Mounira Berkani, Stéphane Lefebvre, Gilles Rostaing, Michel Riccio, Roberta Ruffilli, et al.. Surface analysis of smart power top metal: IR thermal measurement and source potential mapping. International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016 28th, Jun 2016, Prague, Czech Republic. ⟨10.1109/ISPSD.2016.7520861⟩. ⟨hal-01681518⟩

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