Effect of doping on the far-infrared intersubband transitions in nonpolar m -plane GaN/AlGaN heterostructures

C Lim (1) , A. Ajay (1) , Catherine Bougerol (2) , J Lähnemann (1) , F. Donatini (3) , J Schörmann (4) , E. Bellet-Amalric (1) , D A Browne (1) , M Jiménez-Rodríguez (1, 5) , E. Monroy (1)

1 NPSC - Nanophysique et Semiconducteurs
2 NEEL - NPSC - Nanophysique et Semiconducteurs
3 NEEL - POM - Optique & Microscopies
4 JLU - Justus-Liebig-Universität Gießen = Justus Liebig University
5 Department of Electronics, University of Alcala

Domaines: Science des matériaux [cond-mat.mtrl-sci]

C Lim, A. Ajay, Catherine Bougerol, J Lähnemann, F. Donatini, et al.. Effect of doping on the far-infrared intersubband transitions in nonpolar m -plane GaN/AlGaN heterostructures. Nanotechnology, 2016, 27 (14), pp.145201. ⟨10.1088/0957-4484/27/14/145201⟩. ⟨hal-01677524⟩