Dispersion of electrical characteristics and short-circuit robustness of 600V E-mode GaN transistors

Résumé : This paper presents an experimental study of the robustness of 600 V normally-off GaN High Electron Mobility Transistors (HEMT) submitted to Short-Circuits (SC) operations. The obtained results reveal a severe dispersal in terms of SC robustness: some devices were able to support SC of a very long duration but others failed immediately, for the same electrical and thermal initial constraints. In order to understand this dispersal, static characterizations and collapse-related measurements have been carried out on a large number of devices from the same manufacturer with the same blocking voltage and different current ratings. Then, destructive short-circuits were launched on these transistors. Finally, the time leading to failure (TLF) for a given DC voltage was correlated with the parameters extracted from the characterizations.
Type de document :
Communication dans un congrès
PCIM Europe 2017,, May 2017, Nuremberg, Germany. Springer Verlag, PCIM Europe 2017,, pp.1-9, 2017
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https://hal.archives-ouvertes.fr/hal-01671585
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Soumis le : vendredi 22 décembre 2017 - 14:18:41
Dernière modification le : jeudi 11 janvier 2018 - 06:28:19

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  • HAL Id : hal-01671585, version 1

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Matthieu Landel, Stéphane Lefebvre, Denis Labrousse, Cyrille Gautier, Fadi Zaki, et al.. Dispersion of electrical characteristics and short-circuit robustness of 600V E-mode GaN transistors. PCIM Europe 2017,, May 2017, Nuremberg, Germany. Springer Verlag, PCIM Europe 2017,, pp.1-9, 2017. 〈hal-01671585〉

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