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Communication Dans Un Congrès Année : 2011

A 65-nm CMOS Fully Integrated Transceiver Module for 60-GHz Wireless HD Applications

Baudouin Martineau
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Pierre Busson
Andreia Cathelin
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Didier Belot
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Résumé

This paper presents a fully integrated 60GHz transceiver module in a 65nm CMOS technology for wireless high-definition video streaming. The CMOS chip is compatible with the WirelessHD™ standard, covers the four channels and supports 16-QAM OFDM signals including the analog baseband. The ESD-protected die (9.3mm2) is flip-chipped atop a High Temperature Cofired Ceramic (HTCC) substrate, which receives also an external PA and the emission and reception glass-substrate antennas. The module occupies an area of only 13.5χ8.5mm2. It consumes 454mW in receiver mode and 1.357W in transmitter mode (357mW for the transmitter and 1W for the PA).
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Dates et versions

hal-01666102 , version 1 (18-12-2017)

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Citer

Alexandre Siligaris, Olivier Richard, Baudouin Martineau, Christopher Mounet, Fabrice Chaix, et al.. A 65-nm CMOS Fully Integrated Transceiver Module for 60-GHz Wireless HD Applications. 2011 IEEE International Solid-State Circuits Conference, Feb 2011, San Francisco, United States. pp.162-164, ⟨10.1109/ISSCC.2011.5746264⟩. ⟨hal-01666102⟩
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