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Article Dans Une Revue IEEE Journal of Solid-State Circuits Année : 2011

A 65-nm CMOS Fully Integrated Transceiver Module for 60-GHz Wireless HD Applications

Baudouin Martineau
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Pierre Busson
Andreia Cathelin
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Didier Belot
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Résumé

A fully integrated WirelessHD compatible 60-GHz transceiver module in 65-nm CMOS process is presented, covering the four standard channels. The silicon die is flip-chipped on top of a low-cost HTCC module which also includes an external 65-nm CMOS PA and large beamwidth antennas targeting industrial manufacturability. The module achieves a 16QAM OFDM modulation wireless link with 3.8 Gbps over 1 m. The transceiver consumption is 454 mW in RX mode (including PLL) and 1090 mW in TX mode (including PLL and external PA).
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Dates et versions

hal-01666082 , version 1 (18-12-2017)

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Alexandre Siligaris, Olivier Richard, Baudouin Martineau, Christopher Mounet, Fabrice Chaix, et al.. A 65-nm CMOS Fully Integrated Transceiver Module for 60-GHz Wireless HD Applications. IEEE Journal of Solid-State Circuits, 2011, 46 (12), pp.3005 - 3017. ⟨10.1109/JSSC.2011.2166662⟩. ⟨hal-01666082⟩
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