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Millimeter-scale layered MoSe 2 grown on sapphire and evidence for negative magnetoresistance

Abstract : Molecular beam epitaxy technique has been used to deposit a single layer and a bilayer of MoSe 2 on sapphire. Extensive characterizations including in-situ and ex-situ measurements show that the layered MoSe 2 grows in a scalable manner on the substrate and reveals characteristics of a stoichiometric 2H-phase. The layered MoSe 2 exhibits polycrystalline features with domains separated by defects and boundaries. Temperature and magnetic field dependent resistivity measurements unveil a carrier hopping character described within two-dimensional variable range hopping mechanism. Moreover, a negative magnetoresistance was observed, stressing a fascinating feature of the charge transport under an application of magnetic field in the layered MoSe 2 system. This negative magnetoresistance observed at millimeter-scale is similar to that observed recently at room temperature in WS 2 flakes at a micrometer scale 1. This scalability highlights the fact that the underlying physical mechanism is intrinsic to these two-dimensional materials and occurs a very short scale.
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Contributor : Alain Marty <>
Submitted on : Thursday, December 20, 2018 - 3:00:29 PM
Last modification on : Tuesday, April 6, 2021 - 2:50:03 PM
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M. Dau, C. Vergnaud, A. Marty, F. Rortais, C. Beigné, et al.. Millimeter-scale layered MoSe 2 grown on sapphire and evidence for negative magnetoresistance. Applied Physics Letters, American Institute of Physics, 2017, 110 (1), pp.011909. ⟨10.1063/1.4973519⟩. ⟨hal-01664036⟩



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