K. F. Mak, C. Lee, J. Hone, J. Shan, and T. Heinz, : A New Direct-Gap Semiconductor, Physical Review Letters, vol.105, issue.13, p.136805, 2010.
DOI : 10.1088/0268-1242/7/9/001

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, Single-layer MoS2 transistors, Nature Nanotechnology, vol.5, issue.3, pp.147-150, 2011.
DOI : 10.1038/nnano.2010.172
URL : https://infoscience.epfl.ch/record/164049/files/NatNano 6 135 (2011) Schwierz.pdf

D. Xiao, G. Liu, W. Feng, X. Xu, and W. Yao, and Other Group-VI Dichalcogenides, Physical Review Letters, vol.108, issue.19, p.196802, 2012.
DOI : 10.1103/PhysRevB.77.054438

K. F. Mak, K. He, J. Shan, and T. Heinz, Control of valley polarization in monolayer MoS2 by optical helicity, Nature Nanotechnology, vol.7, issue.8, pp.494-498, 2012.
DOI : 10.1038/nnano.2010.172

G. Sallen, monolayers through selective valley excitation, Physical Review B, vol.86, issue.8, p.81301, 2012.
DOI : 10.1103/PhysRevB.85.205302

T. Cao, Valley-selective circular dichroism of monolayer molybdenum disulphide, Nature Communications, vol.101, p.887, 2012.
DOI : 10.1103/PhysRevLett.101.037210
URL : http://www.nature.com/articles/ncomms1882.pdf

H. Zeng, J. Dai, W. Yao, D. Xiao, and X. Cui, Valley polarization in MoS2 monolayers by optical pumping, Nature Nanotechnology, vol.7, issue.8, pp.490-493, 2012.
DOI : 10.1103/PhysRevB.44.3955
URL : http://arxiv.org/pdf/1202.1592

M. Xu, T. Liang, M. Shi, and H. Chen, Graphene-Like Two-Dimensional Materials, Chemical Reviews, vol.113, issue.5, pp.3766-3798, 2013.
DOI : 10.1021/cr300263a

K. Kos´miderkos´mider, J. W. González, and J. Fernández-rossier, Large spin splitting in the conduction band of transition metal dichalcogenide monolayers, Physical Review B, vol.88, issue.24, p.245436, 2013.
DOI : 10.1103/PhysRevB.88.125301

M. W. Wu, J. H. Jiang, and M. Q. Weng, Spin dynamics in semiconductors, Physics Reports, vol.493, issue.2-4, pp.61-236, 2010.
DOI : 10.1016/j.physrep.2010.04.002
URL : http://arxiv.org/pdf/1001.0606

L. Wang and M. W. Wu, : Role of intravalley and intervalley processes, Physical Review B, vol.126, issue.11, p.115302, 2014.
DOI : 10.1103/PhysRevB.88.195417

Y. Ye, Electrical generation and control of the valley carriers in a monolayer transition metal dichalcogenide, Nature Nanotechnology, vol.111, issue.7, pp.598-602, 2016.
DOI : 10.1073/pnas.1406960111

O. L. Sanchez, D. Ovchinnikov, S. Misra, A. Allain, and A. Kis, Valley Polarization by Spin Injection in a Light-Emitting van der Waals Heterojunction, Nano Letters, vol.16, issue.9, pp.5792-5797, 2016.
DOI : 10.1021/acs.nanolett.6b02527

G. Wang, Monolayers by Laser Excitation at Exciton Resonances, Physical Review Letters, vol.114, issue.9, p.97403, 2015.
DOI : 10.1103/PhysRevB.88.195437

Y. Liu, by Plasma, ACS Nano, vol.7, issue.5, pp.4202-4209, 2013.
DOI : 10.1021/nn400644t
URL : https://hal.archives-ouvertes.fr/hal-00987168

A. Fert and H. Jaffrès, Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor, Physical Review B, vol.77, issue.18, p.184420, 2001.
DOI : 10.1063/1.127097

G. Schmidt, D. Ferrand, L. Molenkamp, A. Filip, and B. J. Van-wees, Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor, Physical Review B, vol.61, issue.8, pp.4790-4793, 2000.
DOI : 10.1103/PhysRevB.61.4437

S. Das, H. Y. Chen, A. V. Penumatcha, and J. Appenzeller, Transistors with Scandium Contacts, Nano Letters, vol.13, issue.1, pp.100-105, 2013.
DOI : 10.1021/nl303583v
URL : http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article%3D2313%26context%3Dnanopub

J. R. Chen, Transistors with Ferromagnetic Contacts, Nano Letters, vol.13, issue.7, pp.3106-3110, 2013.
DOI : 10.1021/nl4010157

W. Wang, Controllable Schottky Barriers between MoS2 and Permalloy, Scientific Reports, vol.4, issue.1, p.6928, 2014.
DOI : 10.1038/ncomms2935
URL : http://www.nature.com/articles/srep06928.pdf

A. Dankert, L. Langouche, M. V. Kamalakar, and S. P. Dash, High-Performance Molybdenum Disulfide Field-Effect Transistors with Spin Tunnel Contacts, ACS Nano, vol.8, issue.1, pp.476-482, 2014.
DOI : 10.1021/nn404961e

A. Allain, J. Kang, K. Banerjee, and A. Kis, Electrical contacts to two-dimensional semiconductors, Nature Materials, vol.9, issue.12, pp.1195-1205, 2015.
DOI : 10.1021/nn502553m
URL : https://infoscience.epfl.ch/record/213726/files/Nat Mater (2015) Allain - Electrical contacts to two-dimensional semiconductors.pdf

Y. H. Lee, Atomic Layers with Chemical Vapor Deposition, Advanced Materials, vol.45, issue.17, pp.2320-2325, 2012.
DOI : 10.1016/j.carbon.2007.02.034

B. Radisavljevic and A. Kis, Mobility engineering and a metal???insulator transition in monolayer MoS2, Nature Materials, vol.12, issue.9, pp.815-820, 2013.
DOI : 10.1063/1.4789365

H. Qiu, Hopping transport through defect-induced localized states in molybdenum disulphide, Nature Communications, vol.7, p.2642, 2013.
DOI : 10.1088/0957-4484/19/43/435402

L. Lombez, Electrical spin injection into p-doped quantum dots through a tunnel barrier, Applied Physics Letters, vol.80, issue.8, p.81111, 2007.
DOI : 10.1126/science.282.5386.85

H. Jaffrès, J. George, and A. Fert, Spin transport in multiterminal devices: Large spin signals in devices with confined geometry, Physical Review B, vol.82, issue.14, p.140408, 2010.
DOI : 10.1016/S0304-8853(99)00316-9

P. Laczkowski, Enhancement of the spin signal in permalloy/gold multiterminal nanodevices by lateral confinement, Physical Review B, vol.85, issue.22, p.220404, 2012.
DOI : 10.1038/nphys2331

M. Tran, Enhancement of the Spin Accumulation at the Interface between a Spin-Polarized Tunnel Junction and a Semiconductor, Physical Review Letters, vol.102, issue.3, p.36601, 2009.
DOI : 10.1063/1.1344565

L. Yang, Long-lived nanosecond spin relaxation and spin coherence of electrons in monolayer MoS2 and??WS2, Nature Physics, vol.11, issue.10, pp.830-834, 2015.
DOI : 10.1016/j.physe.2010.01.043

M. Y. Han, J. C. Brant, and P. Kim, Electron Transport in Disordered Graphene Nanoribbons, Physical Review Letters, vol.104, issue.5, p.56801, 2010.
DOI : 10.1103/PhysRevB.69.035413

Z. G. Yu and X. Song, Variable Range Hopping and Electrical Conductivity along the DNA Double Helix, Physical Review Letters, vol.95, issue.26, p.6018, 2001.
DOI : 10.1063/1.481646

Y. Lu, Electrical control of interfacial trapping for magnetic tunnel transistor on silicon, Applied Physics Letters, vol.104, issue.4, p.42408, 2014.
DOI : 10.1103/PhysRevB.78.165329
URL : https://hal.archives-ouvertes.fr/hal-01282860

Y. Lu, Spin-Polarized Inelastic Tunneling through Insulating Barriers, Physical Review Letters, vol.67, issue.17, p.176801, 2009.
DOI : 10.1063/1.2949740
URL : https://hal.archives-ouvertes.fr/hal-00663791

M. T. Bryan, T. Schrefl, D. Atkinson, and D. A. Allwood, Magnetic domain wall propagation in nanowires under transverse magnetic fields, Journal of Applied Physics, vol.31, issue.7, p.73906, 2008.
DOI : 10.1063/1.2167327