Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using Raman spectroscopy

F. Berthet (1) , Y. Guhel (1) , H. Gualous , B. Boudart (1) , J.L. Trolet (2) , M. Piccione (2) , Christophe Gaquière (3)

1 LUSAC - Laboratoire Universitaire des Sciences Appliquées de Cherbourg
2 EAMEA - Ecole des applications militaires de l'énergie atomique
3 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

Domaines: Sciences de l'ingénieur [physics]; Electronique

F. Berthet, Y. Guhel, H. Gualous, B. Boudart, J.L. Trolet, et al.. Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using Raman spectroscopy. Microelectronics Reliability, 2011, 51 (9-11), pp.1796 - 1800. ⟨10.1016/j.microrel.2011.07.022⟩. ⟨hal-01646870⟩