Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range

Besar Asllani (1) , Maxime Berthou (1) , Dominique Tournier (1) , Pierre Brosselard (1) , Phillippe Godignon (2)

1 EE - Ampère, Département Energie Electrique
2 CNM - Centro Nacional de Microelectronica [Spain]

This paper presents a study of the Schottky barrier evolution on SBD and JBS diodes over a wide range of temperatures from 80 to 500 K. We show that inhomogeneities of the Schottky contact have a strong impact on the dependence of barrier characteristics with temperature, especially below 200 K. Analysis of the reverse bias current of such diodes at low temperature show that the barrier height depends on temperature but also on voltage.

Mots clés: 4H-SiC; Schottky diodes; JBS; Richardson constant; Barrier height temperature dependance; partial ionisation

Domaines: Micro et nanotechnologies/Microélectronique

Besar Asllani, Maxime Berthou, Dominique Tournier, Pierre Brosselard, Phillippe Godignon. Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range. Materials Science Forum, 2016, 858, pp.741 - 744. ⟨10.4028/www.scientific.net/MSF.858.741⟩. ⟨hal-01646323⟩