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Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications

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https://hal.archives-ouvertes.fr/hal-01639677
Contributor : Sebastien Fregonese Connect in order to contact the contributor
Submitted on : Monday, November 20, 2017 - 3:12:06 PM
Last modification on : Monday, February 21, 2022 - 3:38:17 PM

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Pascal Chevalier, Michael Schroter, Colombo R. Bolognesi, Vincenzo d'Alessandro, Maria Alexandrova, et al.. Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications. Proceedings of the IEEE, Institute of Electrical and Electronics Engineers, 2017, 105 (6), pp.1035 - 1050. ⟨10.1109/JPROC.2017.2669087⟩. ⟨hal-01639677⟩

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