Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications

Pascal Chevalier 1 Michael Schroter Colombo R. Bolognesi Vincenzo d'Alessandro Maria Alexandrova Josef Bock Ralf Flickiger Sébastien Fregonese 2 Bernd Heinemann C. Jungemann Rickard Lovblom Cristell Maneux 2 Olivier Ostinelli Andreas Pawlak Niccolo Rinaldi Holger Rucker Gerald Wedel Thomas Zimmer 2
1 CEDRIC - LAETITIA - CEDRIC. Traitement du signal et architectures électroniques
CEDRIC - Centre d'études et de recherche en informatique et communications
2 IMS - Laboratoire de l'intégration, du matériau au système
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https://hal.archives-ouvertes.fr/hal-01639677
Contributor : Sebastien Fregonese <>
Submitted on : Monday, November 20, 2017 - 3:12:06 PM
Last modification on : Wednesday, February 19, 2020 - 2:56:13 PM

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CNRS | CNAM | IMS-BORDEAUX-FUSION | IMS-BORDEAUX | IMS-GPU-ENVIRONNEMENTS | UNIV-HESAM | CEDRIC-CNAM

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Pascal Chevalier, Michael Schroter, Colombo R. Bolognesi, Vincenzo d'Alessandro, Maria Alexandrova, et al.. Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications. Proceedings of the IEEE, Institute of Electrical and Electronics Engineers, 2017, 105 (6), pp.1035 - 1050. ⟨10.1109/JPROC.2017.2669087⟩. ⟨hal-01639677⟩

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