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Highly uniform zinc blende GaAs nanowires on Si(111) using a controlled chemical oxide template

Siew Li Tan 1 Yann Genuist 2 Martien I den Hertog 3 Edith Bellet-Amalric 1 Henri Mariette 4 Nikos T Pelekanos 1
1 NPSC - Nanophysique et Semiconducteurs
PHELIQS - PHotonique, ELectronique et Ingénierie QuantiqueS : DRF/IRIG/PHELIQS
2 EpiCM - Epitaxie et couches minces
NEEL - Institut Néel
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https://hal.archives-ouvertes.fr/hal-01638616
Contributor : Martien den Hertog Connect in order to contact the contributor
Submitted on : Monday, November 20, 2017 - 11:09:03 AM
Last modification on : Monday, November 29, 2021 - 8:26:04 AM

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Siew Li Tan, Yann Genuist, Martien I den Hertog, Edith Bellet-Amalric, Henri Mariette, et al.. Highly uniform zinc blende GaAs nanowires on Si(111) using a controlled chemical oxide template. Nanotechnology, Institute of Physics, 2017, 28 (25), pp.255602. ⟨10.1088/1361-6528/aa7169⟩. ⟨hal-01638616⟩

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