A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices

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https://hal.archives-ouvertes.fr/hal-01636559
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Submitted on : Thursday, November 16, 2017 - 4:43:19 PM
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S. Pietranico, S. Lefebvre, S. Pommier, M. Berkani Bouaroudj, Sylvain Bontemps. A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices. Microelectronics Reliability, Elsevier, 2011, 51 (9-11), pp.1824 - 1829. ⟨10.1016/j.microrel.2011.06.009⟩. ⟨hal-01636559⟩

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