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P. Kenneth, D. F. Rodbell, H. H. Heidel, M. S. Tang, P. Gordon et al., Low-Energy Proton-Induced Single-Event-Upsets in 65 nm Node, Silicon-on-Insulator, Latches and Memory Cells, IEEE Transactions on Nuclear ScienceIEEE), 2007.

B. D. Sierawski, M. H. Mendenhall, R. A. Reed, M. A. Clemens, R. A. Weller et al., Muon-Induced Single Event Upsets in Deep-Submicron Technology, IEEE Transactions on Nuclear Science, 2010.
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G. Gasiot, D. Giot, and P. Roche, Multiple Cell Upsets as the Key Contribution to the Total SER of 65 nm CMOS SRAMs and Its Dependence on Well Engineering, IEEE Transactions on Nuclear Science, vol.54, issue.6, 2007.
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E. I. Vatajelu, G. Tsiligiannis, L. Dilillo, A. Bosio, P. Girard et al., On the Correlation between Static Noise Margin and Soft Error Rate Evaluated for a 40 nm SRAM Cell, 2013 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFTS), 2013.
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T. Rousselin, G. Hubert, D. Regis, and M. Gatti, A New Platform to Study the Correlation between Aging and SEE Sensitivity for the Reliability of Deep SubMicron Electronics Devices, SAE Technical Paper Series, pp.2015-2016, 2015.
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G. Hubert, S. Duzellier, C. Inguimbert, C. Boatella-polo, F. Bezerra et al., Operational SER Calculations on the SAC-C Orbit Using the Multi-Scales Single Event Phenomena Predictive Platform (MUSCA SEP3), IEEE Transactions on Nuclear Science, 2009.

G. Hubert and L. Artola, Single-Event Transient Modeling in a 65-nm Bulk CMOS Technology Based on Multi-Physical Approach and Electrical Simulations, IEEE Transactions on Nuclear Science, vol.60, issue.6, 2013.
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G. Hubert, L. Artola, and D. Regis, Impact of scaling on the soft error sensitivity of bulk, FDSOI and FinFET technologies due to atmospheric radiation, Integration, the VLSI Journal, vol.50, 2015.
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URL : https://hal.archives-ouvertes.fr/hal-01226253

G. Hubert, S. Bourdarie, L. Artola, S. Duzellier, C. Boattela-polo et al., Impact of the Solar Flares on the SER Dynamics on Micro and Nanometric Technologies, IEEE Transactions on Nuclear Science, 2010.
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M. Raine, G. Hubert, M. Gaillardin, L. Artola, P. Paillet et al., Impact of the Radial Ionization Profile on SEE Prediction for SOI Transistors and SRAMs Beyond the 32-nm Technological Node, IEEE Transactions on Nuclear Science, vol.58, issue.3, 2011.
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URL : https://hal.archives-ouvertes.fr/ujm-01011665

M. Raine, G. Hubert, M. Gaillardin, P. Paillet, and A. Bournel, Monte Carlo Prediction of Heavy Ion Induced MBU Sensitivity for SOI SRAMs Using Radial Ionization Profile, IEEE Transactions on Nuclear Science, vol.58, issue.6, 2011.
DOI : 10.1109/TNS.2011.2168238

M. Raine, G. Hubert, P. Paillet, M. Gaillardin, and A. Bournel, Implementing Realistic Heavy Ion Tracks in a SEE Prediction Tool: Comparison Between Different Approaches, IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2012.
DOI : 10.1109/tns.2012.2186827

L. Artola, G. Hubert, S. Duzellier, and F. Bezerra, Collected Charge Analysis for a New Transient Model by TCAD Simulation in 90 nm Technology, IEEE Transactions on Nuclear Science, vol.57, issue.4, 2010.
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G. Toure, G. Hubert, K. Castellani-coulie, S. Duzellier, and J. Portal, Simulation of Single and Multi-Node Collection: Impact on SEU Occurrence in Nanometric SRAM Cells, IEEE Transactions on Nuclear Science, vol.58, issue.3, 2011.
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. Fig, Comparison of the SER in 6T SRAM of two planar bulk technologies at two supply voltages for a Paris

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K. Dieter, J. A. Schroder, and . Babcock, Negative Bias Temperature Instability: Road to Cross in Deep Submicron Silicon Semiconductor Manufacturing, Journal of Applied Physics, 2003.

S. Zafar, A. Callegari, E. Gusev, and M. V. Fischetti, Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks, Journal of Applied Physics, vol.119, issue.11, 2003.
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C. Liu and T. Pan, Hot Carrier and Negative-Bias Temperature Instability Reliabilities of Strained-Si MOSFETs, IEEE Transactions on Electron Devices, vol.54, issue.7, 2007.
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X. Li, J. Qin, and J. B. Bernstein, Compact Modeling of MOSFET Wearout Mechanisms for Circuit-Reliability Simulation, IEEE Transactions on Device and Materials Reliability, vol.8, issue.1, 2008.
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I. Moukhtari, V. Pouget, C. Larue, F. Darracq, D. Lewis et al., Impact of Negative Bias Temperature Instability on the Single-Event Upset Threshold of a 65 nm SRAM Cell Microelectronics Reliability, 2013.

P. Magnone, F. Crupi, N. Wils, R. Jain, H. Tuinhout et al., Impact of Hot Carriers on nMOSFET Variability in 45- and 65-nm CMOS Technologies, IEEE Transactions on Electron Devices, vol.58, issue.8, 2011.
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S. Tam, P. Ko, . Hu, and . Chenming, Lucky-Electron Model of Channel Hot- Electron Injection in MOSFET'S, IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 1984.

L. M. Procel, F. Crupi, L. Trojman, J. Franco, and B. Kaczer, A Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs, IEEE Transactions on Device and Materials Reliability, vol.16, issue.1, 2016.
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S. Sinha, G. Yeric, V. Chandra, B. Cline, and C. Yu, Exploring Sub-20 nm FinFET Design With Predictive Technology Models, Proceedings of the 49th Annual Design Automation Conference on -DAC '12, 2012.
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C. Interconnect and L. , 193 nm Dry Patterning, and 100% Pb-Free Packaging, IEEE International Electron Devices Meeting IEEE, 2007.

C. Auth, C. Allen, A. Blattner, D. Bergstrom, M. Brazier et al., A 22 nm High Performance and Low-Power CMOS Technology Featuring Fully- Depleted Tri-Gate Transistors, Self-Aligned Contacts and High Density MIM Capacitors, 2012 Symposium on VLSI Technology (VLSIT), 2012.
DOI : 10.1109/vlsit.2012.6242496
URL : http://sindhu.ece.iisc.ernet.in/nano/media/NB%20Course/VLSI%2022nm.pdf

G. Hubert and A. Cheminet, Radiation Effects Investigations Based on Atmospheric Radiation Model (ATMORAD) Considering GEANT4 Simulations of Extensive Air Showers and Solar Modulation Potential, Radiation Research, vol.184, issue.1, 2015.
DOI : 10.1667/RR14028.1

G. Hubert, C. A. Federico, M. T. Pazianotto, and O. L. Gonzales, Long and short-term atmospheric radiation analyses based on coupled measurements at high altitude remote stations and extensive air shower modeling, Astroparticle Physics, vol.74, 2016.
DOI : 10.1016/j.astropartphys.2015.09.005

G. Hubert, Analyses of cosmic ray induced-neutron based on spectrometers operated simultaneously at mid-latitude and Antarctica high-altitude stations during quiet solar activity, Astroparticle Physics, vol.83, 2016.
DOI : 10.1016/j.astropartphys.2016.07.002
URL : https://hal.archives-ouvertes.fr/hal-01402881

G. Hubert and S. Aubry, Atmospheric cosmic ray variation and ambient dose equivalent assessments considering ground level enhancement thanks to coupled anisotropic solar cosmic ray and extensive air shower modeling(manuscript submitted for publication ) Radiation Research, 2017.
DOI : 10.1667/rr14761.1