Energy state distributions of the P(b) centers at the (100), (110), and (111) Si/SiO(2) interfaces investigated by Laplace deep level transient spectroscopy

L. Dobaczewski (1) , S. Bernardini (2) , P. Kruszewski (1) , P. K. Hurley (3) , V. P. Markevich (2) , I. D. Hawkins (2) , A. R. Peaker (2)

1 IFPAN - Institute of Physics [Warsaw]
2 University of Manchester [Manchester]
3 Tyndall National Institute [Cork]

The energy distribution of the Pb centers at the Si/SiO2 interface has been determined using isothermal laplace deep level transient spectroscopy. For the 111 and 110 interface orientations, the distributions are similar and centered at 0.38 eV below the silicon conduction band. This is consistent with only Pb0 states being present. For the 100 orientation, two types of the interface states are observed: one similar to the 111 and 110 orientations while the other has a negative-U character in which the emission rate versus surface potential dependence is qualitatively different from that observed for Pb0 and is presumed to be Pb1.

Domaines: Micro et nanotechnologies/Microélectronique; Matière Condensée [cond-mat]

L. Dobaczewski, S. Bernardini, P. Kruszewski, P. K. Hurley, V. P. Markevich, et al.. Energy state distributions of the P(b) centers at the (100), (110), and (111) Si/SiO(2) interfaces investigated by Laplace deep level transient spectroscopy. Applied Physics Letters, 2008, 92 (24), pp.92 - 242104. ⟨10.1063/1.2939001⟩. ⟨hal-01633139⟩