, Detailed 11 observation of S(T) spectra allows us to propose the existence of his amplitude decreased for ?c-GaP sample
, Nevertheless, we do not detect responses which can be 28 associated with defect levels at temperatures above 250 K
, Therefore, it can be concluded that the PE-ALD growth process 30 does not lead to the formation of deep-levels with high 31 activation energy
, Keywords deep-level transient spectroscopy, defects, GaP, heterojunctions, plasmaenhanced atomic layer epitaxy, silicon, vol.12, p.14, 2017.
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