InAs/InAsSb superlattice structure tailored for detection of the full midwave infrared spectral domain

Quentin Durlin (1, 2) , Jean-Philippe Perez (1, 2) , Remi Rossignol (1, 2) , Jean-Baptiste Rodriguez (1, 2) , Laurent Cerutti (1, 2) , B. Delacourt (3, 2) , J. Rothman (3) , C. Cervera (3) , Philippe Christol (1, 2)

1 IES - Institut d’Electronique et des Systèmes
2 NANOMIR - Composants à Nanostructure pour le moyen infrarouge
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

We studied the Ga-free InAs/InAsSb type-II superlattice (T2SL) period, thickness and antimony composition, in order to define an optimized structure suitable for detection of the full mid-wavelength infrared domain (MWIR). The SL structures were fabricated by MBE on n-type GaSb substrates and exhibited cut-off wavelengths between 5μm and 5.5μm at 150K. The growth procedure used to achieve strain-balanced structures is reported and first structural and optical results, made of high-resolution Xray diffraction pattern, AFM image scan, photoluminescence (PL) and time resolved photoluminescence measurements (TRPL), are presented and analyzed.

Mots clés: InAs/InAsSb superlattice; MBE growth; photoluminescence; midwave infrared

Domaines: Electronique

Quentin Durlin, Jean-Philippe Perez, Remi Rossignol, Jean-Baptiste Rodriguez, Laurent Cerutti, et al.. InAs/InAsSb superlattice structure tailored for detection of the full midwave infrared spectral domain. QUANTUM SENSING AND NANO ELECTRONICS AND PHOTONICS XIV, 2017, San Francisco, United States. pp.UNSP 1011112, ⟨10.1117/12.2250908⟩. ⟨hal-01628434⟩