Capacitance voltage profiling to determine doping in InAs/GaSb LWIR SL photodetector structures

Remi Rossignol (1, 2) , Jean-Baptiste Rodriguez (1, 2) , Quentin Durlin (1, 2) , H. Ait-Kaci (1, 2) , Jean-Philippe Perez (1, 2) , Frédéric Martinez (1, 3) , F. Gonzales Posada (1, 2) , Philippe Christol (1, 2)

1 IES - Institut d’Electronique et des Systèmes
2 NANOMIR - Composants à Nanostructure pour le moyen infrarouge
3 M@CSEE - Micro électronique, Composants, Systèmes, Efficacité Energétique

The knowledge of carrier concentration of doped or non-intentionally doped layer structures grown by Molecular Beam Epitaxy (MBE) is crucial to fabricate and manage design of new advanced photodetectors called "barrier structures". This communication reports on capacitance-voltage (C-V) study on MOS structure. Simulation to define specific MOS design, allowing doping layer concentration extraction by measurements, is performed. MOS structures based on InAs/GaSb Longwave infrared (LWIR) superlattice have been fabricated and characterized. Results obtained were analyzed and compared with simulations.

Domaines: Electronique

Remi Rossignol, Jean-Baptiste Rodriguez, Quentin Durlin, H. Ait-Kaci, Jean-Philippe Perez, et al.. Capacitance voltage profiling to determine doping in InAs/GaSb LWIR SL photodetector structures. Photonic West Conference, Feb 2017, San Francisco, United States. ⟨10.1117/12.2251153⟩. ⟨hal-01628430⟩