SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power Devices

Thibaut Chailloux (1, 2) , Cyril Calvez (1, 2) , Nicolas Thierry Thierry-Jebali (3) , Dominique Planson (1, 2) , Dominique Tournier (1, 2)

1 EE - Ampère, Département Energie Electrique
2 INSA Lyon - Institut National des Sciences Appliquées de Lyon
3 LMI - Laboratoire des Multimatériaux et Interfaces

The aim of this study consists in comparing the effects of temperature on various SiC power devices. Electrical characteristics have been measured for temperatures from 100K to 525K. All devices are suitable for high temperature. However, SiC MOSFETs are not a good choice for cryogenic temperature, while SiC BJTs are less affected by temperature than other components, especially for cryogenic temperature.

Mots clés: Bipolar Junction Transistor (BJT); Cryogenic Temperature; High-Temperature; Junction Field Effect Transistor (JFET); MOSFET; Silicon Carbide (SiC)

Domaines: Electronique

Thibaut Chailloux, Cyril Calvez, Nicolas Thierry Thierry-Jebali, Dominique Planson, Dominique Tournier. SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power Devices. Materials Science Forum, 2014, 778-780, pp.1122 - 1125. ⟨10.4028/www.scientific.net/MSF.778-780.1122⟩. ⟨hal-01628242⟩