Pulse Current Characterization of SiC GTO Thyristors with Etched JTE

Sigo Scharnholz (1) , Ralf Hassdorf (1) , Gontran Pâques (1) , Bertrand Vergne (1) , Dominique Planson (2, 3)

1 ISL - Institut franco-allemand de recherches de Saint-Louis
2 EE - Ampère, Département Energie Electrique
3 INSA Lyon - Institut National des Sciences Appliquées de Lyon

In this paper we highlight our latest results on high voltage SiC thyristors comprising an etched JTE. Compared to our previous design concepts, the thyristors described here are larger in size and have been investigated regarding pulsed power applications. Quasi-static on-state characteristics show that the devices withstand a repetitive current load of up to 16 A corresponding to a current density of 825 A/cm2. Their switching behavior was evaluated up to 1000 V demonstrating characteristic waveforms at turn-on and gate turn-off. Moreover, pulsed current characteristics show that the typical device under test sustained a current pulse of 20 μs with a peak value of 200 A and 10 kA/cm2, respectively.

Mots clés: Edge Termination; Gate Turn-Off; GTO; Junction Termination Extension (JTE); Pulsed Power; Thyristor

Domaines: Electronique

Sigo Scharnholz, Ralf Hassdorf, Gontran Pâques, Bertrand Vergne, Dominique Planson. Pulse Current Characterization of SiC GTO Thyristors with Etched JTE. Materials Science Forum, 2013, 740-742, pp.986 - 989. ⟨10.4028/www.scientific.net/MSF.740-742.986⟩. ⟨hal-01627784⟩