p-Doped SiC Growth on Diamond Substrate by VLS Transport

Arthur Vo Ha (1) , Davy Carole (1) , Mihai Lazar (2, 3) , Dominique Tournier (2, 3) , François Cauwet (1) , Véronique Soulière (1) , Dominique Planson (2, 3) , Christian Brylinski (1) , Gabriel Ferro (1)

1 LMI - Laboratoire des Multimatériaux et Interfaces
2 EE - Ampère, Département Energie Electrique
3 INSA Lyon - Institut National des Sciences Appliquées de Lyon

This work deals with the study of the Selective Epitaxial Growth (SEG) of SiC using the Vapour-Liquid-Solid (VLS) transport on diamond (100) substrate with Al-Si as the liquid phase fed by propane. Morphology, structure and doping type of the SiC deposit were determined. Polycrystalline p-doped 3C-SiC was obtained during the growth. Study of the initial step of growth showed that SiC nucleation occurs without any propane addition but just through the interaction of liquid Al-Si and diamond via a dissolution/precipitation process. This explains the random nucleation and the polycrystalline growth. Despite this, preliminary electrical measurements show encouraging results.

Mots clés: Diamond; p-Type Doping; Selective Epitaxy; Silicon Carbide (SiC); VLS Growth

Domaines: Electronique

Arthur Vo Ha, Davy Carole, Mihai Lazar, Dominique Tournier, François Cauwet, et al.. p-Doped SiC Growth on Diamond Substrate by VLS Transport. Materials Science Forum, 2013, 740-742, pp.331 - 334. ⟨10.4028/www.scientific.net/MSF.740-742.331⟩. ⟨hal-01627777⟩