Gas mixture influence on the reactive ion etching of InSb in an inductively coupled methane-hydrogen plasma

J. Abautret (1) , A. Evirgen (1) , J.-P. Perez (1, 2) , Y. Laaroussi (1) , A. Cordat , F. Boulard (3) , Philippe Christol (1, 2)

1 IES - Institut d’Electronique et des Systèmes
2 NANOMIR - Composants à Nanostructure pour le moyen infrarouge
3 IMN - Institut des Matériaux Jean Rouxel

Domaines: Electronique

J. Abautret, A. Evirgen, J.-P. Perez, Y. Laaroussi, A. Cordat, et al.. Gas mixture influence on the reactive ion etching of InSb in an inductively coupled methane-hydrogen plasma. Semiconductor Science and Technology, 2015, 30 (6), ⟨10.1088/0268-1242/30/6/065014⟩. ⟨hal-01626341⟩