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TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices

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https://hal.archives-ouvertes.fr/hal-01625567
Contributor : Frédéric Darracq <>
Submitted on : Friday, October 27, 2017 - 5:41:09 PM
Last modification on : Thursday, January 11, 2018 - 6:21:09 AM

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  • HAL Id : hal-01625567, version 1

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Mukherjee Kalparupa, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat. TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices. Microelectronics Reliability, Elsevier, 2017. ⟨hal-01625567⟩

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