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Silicon-rich SiO2/SiO2 multilayers: A promising material for the third generation of solar cell

Abstract : Si-rich-SiO 2 SRSO / SiO 2 multilayers MLs have been grown by reactive magnetron sputtering. The presence of silicon nanoclusters Si-ncls within the SRSO sublayer and annealing temperature influence optical absorption as well as photoluminescence. The optimized annealing temperature has been found to be 1100 ° C, which allows the recovery of defects and thus enhances photoluminescence. Four MLs with Si-ncl size ranging from 1.5 to 8 nm have been annealed using the optimized conditions and then studied by transmission measurements. Optical absorption has been modeled so that a size effect in the linear absorption coefficient in cm −1 has been evidenced and correlated with TEM observations. It is demonstrated that amorphous Si-ncl absorption is fourfold higher than that of crystalline Si-ncls.
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F. Gourbilleau, C. Ternon, D. Maestre, Olivier Palais, C. Dufour. Silicon-rich SiO2/SiO2 multilayers: A promising material for the third generation of solar cell. Journal of Applied Physics, American Institute of Physics, 2009, 106 (1), pp.013501. ⟨10.1063/1.3156730⟩. ⟨hal-01624557⟩

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