D. G. Truhlar, B. C. Garrett, and S. J. Klippenstein, Current Status of Transition-State Theory, The Journal of Physical Chemistry, vol.100, issue.31, pp.12771-12800, 1996.
DOI : 10.1021/jp953748q

G. S. Hammond, A Correlation of Reaction Rates, Journal of the American Chemical Society, vol.77, issue.2, pp.334-338, 1955.
DOI : 10.1021/ja01607a027

E. Suhir, Predicted reliability of aerospace electronics: Application of two advanced probabilistic concepts, 2013 IEEE Aerospace Conference, 2013.
DOI : 10.1109/AERO.2013.6496824

A. Bensoussan and E. Suhir, Design-for-reliability (DfR) of aerospace electronics: Attributes and challenges, 2013 IEEE Aerospace Conference, 2013.
DOI : 10.1109/AERO.2013.6496831

J. R. Black, Electromigration ? a brief survey and some recent results, IEEE Trans. ED, p.16, 3881969.

B. N. Agarwala, Dependence of Electromigration???Induced Failure Time on Length and Width of Aluminum Thin???Film Conductors, Journal of Applied Physics, vol.11, issue.2, 1970.
DOI : 10.1063/1.1651951

D. S. Pect, Comprensive model for humidity testing correlation, Proc. 24th IEEE IRPS, pp.44-50, 1985.

E. Wigner, The transition state method, Transactions of the Faraday Society, vol.34, pp.29-41, 1938.
DOI : 10.1039/tf9383400029

M. Evans and M. Polanyi, Inertia and driving force of chemical reactions, Transactions of the Faraday Society, vol.34, pp.11-29, 1938.
DOI : 10.1039/tf9383400011

H. Cui, Accelerated Temperature Cycle Test and Coffin?Manson Model for Electric Packaging, RAMS, 2005.

I. C. Chen, Accelerated testing of TDDB in SiO 2, IEEE ED Letters, issue.8, 1401987.

M. Dai, A Model With Temperature-Dependent Exponent for Hot-Carrier Injection in High-Voltage nMOSFETs Involving Hot-Hole Injection and Dispersion, IEEE Transactions on Electron Devices, vol.55, issue.5, pp.1255-1258, 2008.
DOI : 10.1109/TED.2008.919322

E. Takeda, New hot-carrier injection and device degradation in submicron MOSFETs, Solid State Electron Devices IEE Proc. I, pp.144-150, 1983.
DOI : 10.1049/ip-i-1.1983.0026

K. Decker, GaAs MMIC Hydrogen Degradation Study, GaAs Reliability Workshop Digest, 1994.

W. Roesch, Accelerated effects of hydrogen on GaAs MESFETs, GaAs Reliability Workshop Digest, 1994.

M. J. Delaney, Reliability of 0.25 ?m GaAs MESFET MMIC process: results of accelerated lifetests and hydrogen exposure, GaAs Reliability Workshop, 1994.

M. Ciappa, Lifetime Modeling of Thermomechanics Related Failure Mechanisms in HP IGBT Modules for Traction Applications, 2003.

K. Dieter and . Schroder, Negative bias temperature instability: road to cross in deep submicron silicon semiconductor manufacturing, J. Appl. Phys, vol.94, issue.1, 2003.

S. Glasstone, K. J. Laidler, and H. Eyring, The Theory of Rate Processes: the Kinetics of Chemical Reactions, Viscosity, Diffusion and Electrochemical Phenomena, 1941.

M. N. Yoder, Ohmic contacts in GaAs, Solid-State Electronics, vol.23, issue.2, pp.117-119, 1980.
DOI : 10.1016/0038-1101(80)90145-8

C. P. Lee, B. M. Welch, and W. P. Fleming, Reliability of AuGe/Pt and AuGe/Ni ohmic contacts on GaAs, Electronics Letters, vol.17, issue.12, pp.407-408, 1981.
DOI : 10.1049/el:19810283

. Bensoussan, Reliability of a GaAs MMIC Process Based on 0.5 ?m Au/Pd-Ti gate MESFETs, 32th Annual proceedings Reliability Physics, pp.434-445, 1994.

H. Hemmati and M. Krainak, Performance tests of Quasi-CW diode Pump Arrays conducted or sponsored by NASA Goddard Space Flight Center, Earth Laser Communications Digest of LEOS Summer Topical Meetings: Advanced Semiconductor Lasers and Applications, pp.11-15, 1997.

Y. Deshayes, Estimation of lifetime distributions on 1550-nm DFB laser diodes using Monte-Carlo statistic computations, Reliability of Optical Fiber Components, Devices, Systems, and Networks II, 2014.
DOI : 10.1117/12.545737
URL : https://hal.archives-ouvertes.fr/hal-00162359