J. B. Bernstein, Reliability Prediction from Burn-in Data Fit to Reliability Models, pp.0-128007, 2014.

J. B. Bernstein, Physics-of-Failure Based Handbook of Microelectronic Systems, Reliability Information Analysis Center, 2008.

J. B. Bernstein, M. Gabbay, and O. Delly, Reliability matrix solution to multiple mechanism prediction, Microelectronics Reliability, vol.54, issue.12, pp.2951-2955, 2014.
DOI : 10.1016/j.microrel.2014.07.115

J. B. Bernstein, Reliability Prediction for Aerospace Electronics
DOI : 10.21236/ADA621707

G. Groeseneken, R. Degraeve, T. Nigam, G. Van-den-bosch, and H. E. Maes, Hot carrier degradation and time-dependent dielectric breakdown in oxides, Microelectronic Engineering, vol.49, issue.1-2, pp.49-76, 1999.
DOI : 10.1016/S0167-9317(99)00427-X

X. Wang, P. Jain, D. Jiao, and C. H. Kim, Impact of interconnect length on BTI and HCI induced frequency degradation, 2012 IEEE International Reliability Physics Symposium (IRPS), p.2012
DOI : 10.1109/IRPS.2012.6241798

C. Nunes, P. F. Butzen, A. I. Reis, and R. P. , Ribas, BTI, HCI and TDDB aging impact in flipflops, Microelectron. Reliab, vol.53, pp.9-11
DOI : 10.1016/j.microrel.2013.07.044

J. Peng, D. M. Huang, G. F. Jiao, and M. F. Li, A reliability model for CMOS circuit based on device degradation, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, pp.978-979, 2012.
DOI : 10.1109/ICSICT.2012.6467686

J. B. Velamala, K. B. Sutaria, V. S. Ravi, and Y. Cao, Failure Analysis of Asymmetric Aging Under NBTI, IEEE Transactions on Device and Materials Reliability, vol.13, issue.2, 2013.
DOI : 10.1109/TDMR.2012.2235441

G. Delarozee, Introduction to reliability, Microelectronic Engineering, vol.49, issue.1-2, pp.3-10, 1999.
DOI : 10.1016/S0167-9317(99)00424-4

M. H. Hsieh, Y. Huang, T. Y. Yew, W. Wang, and Y. H. Lee, The impact and implication of BTI/HCI decoupling on ring oscillator, 2015 IEEE International Reliability Physics Symposium, pp.978-979, 2015.
DOI : 10.1109/IRPS.2015.7112758

S. Mahapatara, C. D. Parikh, V. R. Rao, C. R. Viswanathan, and J. Vasi, Device scaling effects on hot-carrier induced interface and oxide-trapping charge distributions in MOSFETs, IEEE Trans. Electron Devices, pp.47-789, 2000.

V. Huard, NBTI degradation: From physical mechanisms to modelling, Microelectronics Reliability, vol.46, issue.1, pp.1-23, 2006.
DOI : 10.1016/j.microrel.2005.02.001

D. Young and A. Christou, Failure mechanism models for electromigration, IEEE Transactions on Reliability, vol.43, issue.2, pp.186-192, 1994.
DOI : 10.1109/24.294986

M. Gall, C. Capasso, D. Jawarani, R. Hernandez, and H. Kawasaki, Statistical analysis of early failures in electromigration, Journal of Applied Physics, vol.51, issue.2, pp.90-732, 2001.
DOI : 10.1063/1.327580

D. K. Schroder and J. A. Babcock, Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing, Journal of Applied Physics, vol.39, issue.1, pp.1-18, 2003.
DOI : 10.1109/5.915381

B. Tudor, J. Wang, Z. Chen, R. Tan, W. Liu et al., An accurate MOSFET aging model for 28 nm integrated circuit simulation, Microelectron. Reliab, pp.52-1565, 2012.
DOI : 10.1016/j.microrel.2011.12.008

A. Acovic, G. L. Rosa, and Y. Sun, A review of hot-carrier degradation mechanisms in MOSFETs, Microelectronics Reliability, vol.36, issue.7-8, pp.845-869, 1996.
DOI : 10.1016/0026-2714(96)00022-4

V. K. Arora, D. C. Chek, and M. L. Tan, The role of ballistic mobility and saturation velocity in performance evaluation of a nano-CMOS circuit, 2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems, pp.14-17, 2009.
DOI : 10.1109/ELECTRO.2009.5441185

P. Joseph and B. , Bernstein specializes in several areas of nano-scale micro-electronic device reliability and physics of failure research, including packaging, system reliability modeling, gate oxide integrity, radiation effects, Flash NAND and NOR memory, SRAM and DRAM, MEMS and laser programmable metal interconnect. He directs the Laboratory for Failure Analysis and Reliability of Electronic Systems, teaches VLSI design courses and heads the VLSI program at Ariel University. His Laboratory is a center of research activity dedicated to serving the needs of manufacturers of highly reliable electronic systems using commercially available off the shelf parts, Professor Bernstein was a Fulbright Senior Researcher

. Dr, Etat in Applied Physics and his field of expertise is on microelectronic parts reliability at Thales Alenia Space He is now full time seconded at Institut de Recherche (IRT) Saint Exupery Toulouse (France) as Technical Referent for microelectronic and photonic components reliability and recognised at Thales Alenia Space as Expert on optics and opto-electronics parts. Dr. Alain Bensoussan interests lie in several areas in microelectronics reliability and physics of failure applied research on GaAs and III-V compounds MMIC (monolithic microwave integrated circuits), microwave hybrid modules, Si and GaN transistors, IC's and Deep-Sub-Micron technologies, MEMS and MOEMS, active and passive optoelectronic devices and modules. He represented Thales Alenia Space at EUROSPACE organization, Aeronautic, Space and Embedded Systems - AESE) Agency -Parts Policy and Standards Working Group) since more than 15 years