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Article Dans Une Revue Microelectronics Reliability Année : 2017

Open Archive TOULOUSE Archive Ouverte (OATAO) Reliability prediction with MTOL

Résumé

Here, we develop a comprehensive reliability prediction of FPGA devices solely from data motivated by physics of failure. The Multiple Temperature Operational Life (MTOL) testing method calculates the failure in time (FIT) of 3 different failure mechanisms on both 45nm and 28nm technologies. From a comparison of the two technologies, we found significant hot carrier injection (HCI) and Electromigration (EM) throughout the operating range in 45nm technology. However, it seems that 28nm exhibits no HCI or EM degradation even up to 1.6V on the core. As a result, we show that there is no effect of frequency on the reliability for that technology. This means that at 28nm, the devices can be de-rated or up-rated based only on the NBTI model and therefore reliability is dependent only on operating Voltage and Temperature with a single activation energy. Notably, the activation energies and voltage acceleration factors for both technologies are remarkably similar. This demonstration shows that, unlike other conventional qualification procedures, the MTOL testing procedure gives a broad description of the reliability in sub-zero and high temperatures. This procedure provides FIT prediction using reduced materials and test time, which can be applied to newer technologies, specifically 20nm and 16nm and beyond.
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Dates et versions

hal-01622781 , version 1 (21-11-2017)

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Joseph B Bernstein, Alain Bensoussan, Emmanuel Bender, Joseph B Bernstein. Open Archive TOULOUSE Archive Ouverte (OATAO) Reliability prediction with MTOL. Microelectronics Reliability, 2017, 68, pp.91-97. ⟨10.1016/j.microrel.2016.09.005⟩. ⟨hal-01622781⟩

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