Class-J Power Amplifier for 5G Applications in 28nm CMOS FD-SOI Technology

Tony Hanna (1) , Nathalie Deltimple (1) , Sebastien Fregonese (1)

1 IMS - Laboratoire de l'intégration, du matériau au système

In this work, we present the design of a fully integrated wideband high efficiency power amplifier for 5G applications. The amplifier consists of two single ended common source stages, with a class-J power stage in the 28nm CMOS FD-SOI technology. Post-layout simulation results show a broadband behavior of the amplifier over 12 GHz of bandwidth with a saturated power of 16.2 dBm and a peak power added efficiency of 39 % at 28 GHz.

Mots clés: RF power amplifier; integrated circuits; 5G.

Domaines: Electronique

Tony Hanna, Nathalie Deltimple, Sebastien Fregonese. Class-J Power Amplifier for 5G Applications in 28nm CMOS FD-SOI Technology. SBCCI 2017, Sep 2017, Fortaleza Brazil. ⟨hal-01618189⟩