Polarization insensitive Ge-rich silicon germanium waveguides for optical interconnects on silicon

Abstract : We propose germanium-rich silicon germanium waveguides as a basic building block for polarization insensitive circuitry on silicon. In this work a detailed study of SiGe waveguides geometries is performed to find optimal parameters to simultaneously obtain low polarization sensitivity and single mode operation at λ=1.55µm. The polarization dependence of the effective index, group index and dispersion coefficient is investigated. Optimized geometries are tolerant to fabrication errors and can be realized with the current state of the art CMOS technology. As a next step polarization insensitive multimode interference structures have been designed.
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Communication dans un congrès
SPIE optics + Optoelectronics, Apr 2017, Pragues, Czech Republic
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Soumis le : lundi 16 octobre 2017 - 13:54:13
Dernière modification le : jeudi 19 octobre 2017 - 01:11:22

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V Vakarin, Papichaya Chaisakul, Jacopo Frigerio, Andrea Ballabio, Joan Manel Ramírez, et al.. Polarization insensitive Ge-rich silicon germanium waveguides for optical interconnects on silicon. SPIE optics + Optoelectronics, Apr 2017, Pragues, Czech Republic. 〈hal-01617222〉

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