Electrical properties of single crystal Yttrium Iron Garnet ultra-thin films at high temperatures

Nicolas Thiéry; Vladimir V. Naletov; Laurent Vila; Alain Marty; Ariel Brenac; Jean-François Jacquot; Grégoire de Loubens; Michel Viret; Abdelmadjid Anane; Vincent Cros; Jamal Ben Youssef; Vladislav E. Demidov; Sergej O. Demokritov; Olivier Klein

Electrical properties of single crystal Yttrium Iron Garnet ultra-thin films at high temperatures

Nicolas Thiéry ¹ Vladimir V. Naletov ² Laurent Vila ¹ Alain Marty ¹ Ariel Brenac ¹ Jean-François Jacquot ³ Grégoire de Loubens ⁴ Michel Viret ⁵ Abdelmadjid Anane ² Vincent Cros ² Jamal Ben Youssef ⁶ Vladislav E. Demidov ⁷ Sergej O. Demokritov ⁷ Olivier Klein ¹

1 SPINTEC - SPINtronique et TEchnologie des Composants

2 UMP CNRS/THALES - Unité mixte de physique CNRS/Thalès

3 CAMPE - Conception d’Architectures Moléculaires et Processus Electroniques

SYMMES - SYstèmes Moléculaires et nanoMatériaux pour l’Energie et la Santé : DRF/INAC/SYMMES

4 LNO - Laboratoire Nano-Magnétisme et Oxydes

SPEC - UMR3680 - Service de physique de l'état condensé, IRAMIS - Institut Rayonnement Matière de Saclay

5 SPEC - UMR3680 - Service de physique de l'état condensé

6 LMB - Laboratoire de magnétisme de Bretagne

7 University of Muenster

Abstract : We report a study on the electrical properties of 19 nm thick Yttrium Iron Garnet (YIG) films grown by liquid phase epitaxy. The electrical conductivity and Hall coefficient are measured in the high temperature range [300,400]~K using a Van der Pauw four-point probe technique. We find that the electrical resistivity decreases exponentially with increasing temperature following an activated behavior corresponding to a band-gap of $E_g\approx 2$ eV, indicating that epitaxial YIG ultra-thin films behave as large gap semiconductor, and not as electrical insulator. The resistivity drops to about $5\times 10^3$~$\Omega \cdot \text{cm}$ at $T=400$ K. We also infer the Hall mobility, which is found to be positive ($p$-type) at 5 cm$^2$/(V$\cdot$sec) and about independent of temperature. We discuss the consequence for non-local transport experiments performed on YIG at room temperature. These electrical properties are responsible for an offset voltage (independent of the in-plane field direction) whose amplitude, odd in current, grows exponentially with current due to Joule heating. These electrical properties also induce a sensitivity to the perpendicular component of the magnetic field through the Hall effect. In our lateral device, a thermoelectric offset voltage is produced by a temperature gradient along the wire direction proportional to the perpendicular component of the magnetic field (Righi-Leduc effects).

Document type :

Journal articles

Domain :

Physics [physics] / Condensed Matter [cond-mat] / Materials Science [cond-mat.mtrl-sci]

Complete list of metadatas

https://hal.archives-ouvertes.fr/hal-01614816
Contributor : Olivier Klein <>
Submitted on : Wednesday, October 11, 2017 - 2:26:42 PM
Last modification on : Thursday, April 4, 2019 - 5:10:03 PM

Electrical properties of single crystal Yttrium Iron Garnet ultra-thin films at high temperatures

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Electrical properties of single crystal Yttrium Iron Garnet ultra-thin films at high temperatures

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