films on silicon, Journal of Applied Physics, vol.46, issue.5, p.1587, 1986. ,
DOI : 10.1149/1.2119599
Anodic TiO[sub 2] Thin Films, Journal of The Electrochemical Society, vol.136, issue.2, p.442, 1989. ,
DOI : 10.1149/1.2096652
A simple chemical vapour deposition method for depositing thin TiO2 films, Thin Solid Films, vol.109, issue.2, p.169, 1983. ,
DOI : 10.1016/0040-6090(83)90136-0
Structural properties of titanium dioxide films deposited in an rf glow discharge, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.1, issue.4, p.1810, 1983. ,
DOI : 10.1116/1.572220
Spectroellipsometric characterization of lanthanide-doped TiO2 films obtained via the sol-gel technique, Thin Solid Films, vol.234, issue.1-2, p.561, 1993. ,
DOI : 10.1016/0040-6090(93)90332-J
films, Journal of Applied Physics, vol.24, issue.3, p.1421, 1992. ,
DOI : 10.1364/AO.23.003571
anatase thin films, Journal of Applied Physics, vol.84, issue.4, p.2042, 1994. ,
DOI : 10.1016/0022-2313(76)90061-2
Titanium isopropoxide as a precursor for atomic layer deposition: characterization of titanium dioxide growth process, Applied Surface Science, vol.161, issue.3-4, p.385, 2000. ,
DOI : 10.1016/S0169-4332(00)00274-9
High-?? gate dielectrics: Current status and materials properties considerations, Journal of Applied Physics, vol.2000, issue.10, p.5243, 2001. ,
DOI : 10.1063/1.1354161
Non-Aqueous Routes to Metal Oxide Thin Films by Atomic Layer Deposition, Angewandte Chemie International Edition, vol.18, issue.19, p.3592, 2008. ,
DOI : 10.1002/anie.200705550
Nonlinear capacitance variations in amorphous oxide metal-insulator-metal structures, Applied Physics Letters, vol.2003, issue.17, p.172903, 2007. ,
DOI : 10.1149/1.2198008
High performance metal-insulator-metal capacitor using a SrTiO3/ZrO2 bilayer, Applied Physics Letters, vol.94, issue.25, p.253502, 2009. ,
DOI : 10.1149/1.2728832
URL : https://hal.archives-ouvertes.fr/hal-00633086
Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook, Nanotechnology, vol.22, issue.25, p.254002, 2011. ,
DOI : 10.1088/0957-4484/22/25/254002
Isothermal transport in TiO2???x. Part I. Electromigration in TiO2???x, Solid State Ionics, vol.12, p.431, 1984. ,
DOI : 10.1016/0167-2738(84)90173-5
Electrical conductivity and charge compensation in Nb doped TiO2 rutile, The Journal of Chemical Physics, vol.34, issue.9, p.857, 1977. ,
DOI : 10.1063/1.434952
Studies of the Defect Structure of Nonstoichiometric Rutile, TiO[sub 2???x], Journal of The Electrochemical Society, vol.114, issue.2, p.172, 1967. ,
DOI : 10.1149/1.2426532
The Role of Interstitial Sites in the Ti3d Defect State in the Band Gap of Titania, Science, vol.317, issue.5842, p.1755, 2008. ,
DOI : 10.1126/science.1146006
Single Crystals, Physical Review, vol.50, issue.5, p.1222, 1959. ,
DOI : 10.1103/PhysRev.91.793
Photoelectronic Processes in Rutile, Physical Review, vol.113, issue.3, p.979, 1969. ,
DOI : 10.1103/PhysRev.113.1222
Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere, Journal of Applied Physics, vol.104, issue.12, p.123716, 2008. ,
DOI : 10.1007/978-3-662-09291-0
First-principles study of native defects in rutile TiO2, Physics Letters A, vol.372, issue.9, p.1527, 2008. ,
DOI : 10.1016/j.physleta.2007.10.011
Solid State Commun, 1976. ,
Tracer impurity diffusion in single-crystal rutile (TiO2???x), Journal of Physics and Chemistry of Solids, vol.46, issue.11, p.1267, 1985. ,
DOI : 10.1016/0022-3697(85)90129-5
Electrical conductivity in non-stoichiometric titanium dioxide at elevated temperatures, Journal of Materials Science, vol.57, issue.8, p.2676, 1988. ,
DOI : 10.1007/BF00547436
Electrical Conductivity of Single and Polycrystalline Near-Stoichiometric Rutile in the Range 600o to 1400oC, Journal of the American Ceramic Society, vol.14, issue.6585, p.623, 1965. ,
DOI : 10.1063/1.1702635