The coupled atom transistor

Abstract : We describe the first implementation of a coupled atom transistor where two shallow donors (P or As) are implanted in a nanoscale silicon nanowire and their electronic levels are controlled with three gate voltages. Transport spectroscopy through these donors placed in series is performed both at zero and microwave frequencies. The coherence of the charge transfer between the two donors is probed by Landau-Zener-Stuckelberg interferometry. Single-charge transfer at zero bias (electron pumping) has been performed and the crossover between the adiabatic and non-adiabatic regimes is studied.
Type de document :
Article dans une revue
Journal of Physics-condensed Matter, 2015, 27 (15), pp.154206. 〈10.1088/0953-8984/27/15/154206〉
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Contributeur : Jérôme Planès <>
Soumis le : jeudi 5 octobre 2017 - 16:07:28
Dernière modification le : vendredi 9 mars 2018 - 16:36:02




Xavier Jehl, Benoit Voisin, Benoît Roche, E. Dupont-Ferrier, Silvano De Franceschi, et al.. The coupled atom transistor. Journal of Physics-condensed Matter, 2015, 27 (15), pp.154206. 〈10.1088/0953-8984/27/15/154206〉. 〈hal-01611290〉



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