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Article Dans Une Revue Journal of Electronic Materials Année : 2011

Electronic and optical modeling of solar cell compounds CuGaSe 2 and CuInSe 2

A. Soni
  • Fonction : Auteur
A. Dashora
  • Fonction : Auteur
V. Gupta
  • Fonction : Auteur
C.M. Arora
  • Fonction : Auteur
B.L. Ahuja
  • Fonction : Auteur
R. Pandey
  • Fonction : Auteur

Résumé

We present dielectric-function-related optical properties such as absorption coefficient, refractive index, and reflectivity of the semiconducting chalcopyrites CuGaSe 2 and CuInSe 2. The optical properties were calculated in the framework of density functional theory (DFT) using linear combination of atomic orbitals (LCAO) and full-potential linearized augmented plane wave (FP-LAPW) methods. The calculated spectral dependence of complex dielectric functions is interpreted in terms of interband transitions within energy bands of both chalcopyrites; for example, the lowest energy peak in the ε 2ωx spectra for CuGaSe2 corresponds to interband transitions from Ga/Se-4p → Ga-4s while that for CuInSe2 emerges as due to transition between Se-4p →In-5s bands. The calculated dielectric constant, ε 10, for CuInSe 2 is higher than that of CuGaSe 2. The electronic structure of both compounds is reasonably interpreted by the LCAO (DFT) method. The optical properties computed using the FP-LAPW model (with scissor correction) are close to the spectroscopic ellipsometry data available in the literature. © 2011 TMS.

Dates et versions

hal-01610579 , version 1 (04-10-2017)

Identifiants

Citer

A. Soni, A. Dashora, V. Gupta, C.M. Arora, Michel Rérat, et al.. Electronic and optical modeling of solar cell compounds CuGaSe 2 and CuInSe 2. Journal of Electronic Materials, 2011, 40 (11), pp.2197-2208. ⟨10.1007/s11664-011-1739-1⟩. ⟨hal-01610579⟩
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