First-principles optical response of semiconductors and oxide materials - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2011

First-principles optical response of semiconductors and oxide materials

L. Bernasconi
  • Fonction : Auteur
S. Tomić
  • Fonction : Auteur
M. Ferrero
  • Fonction : Auteur
R. Orlando
  • Fonction : Auteur
Roberto Dovesi
N.M. Harrison
  • Fonction : Auteur

Résumé

The calculation of the optical gaps of a series of nonmagnetic direct and indirect semiconductors and simple oxides is addressed using an all-electron perturbative method based on density-functional theory. Hybrid exchange, in both the Kohn-Sham spectrum and the perturbative response, is shown to be essential to achieve an accuracy comparable to experimental estimates for all systems studied, including those exhibiting excitonic transitions at the absorption edge. In agreement with existing evidence it is shown that a proper description of excitonic features relies crucially on the nonlocality of the response equations. © 2011 American Physical Society.

Dates et versions

hal-01610578 , version 1 (04-10-2017)

Identifiants

Citer

L. Bernasconi, S. Tomić, M. Ferrero, Michel Rérat, R. Orlando, et al.. First-principles optical response of semiconductors and oxide materials. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83 (19), ⟨10.1103/PhysRevB.83.195325⟩. ⟨hal-01610578⟩
39 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More